Solid-state imaging device
US11011557B2 · kind B2 · utility
0Cited by
0References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2018 |
| Grant date | May 18, 2021 |
| Priority date | — |
| Expiry date | May 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A plurality of pixels are two-dimensionally arranged on a semiconductor substrate. Each of the pixels includes: two photodiodes each generating charge by photoelectric conversion; first and second memories spaced apart from each other between the two photodiodes as viewed in cross section; a first readout gate reading charge from the two photodiodes to the first memory; and a second readout gate reading charge from the two photodiodes to the second memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.