TOWER PARTNERS SEMICONDUCTOR CO., LTD.
187Patents
118Active
187Granted
55Portfolio score
Filing activity: Dec 19, 1996 → Aug 30, 2024 · 28 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6168965A | Method for making backside illuminated image sensor | Emerging Cross-Sectional Technologies | 239 | Expired |
| US6169319A | Backside illuminated image sensor | Emerging Cross-Sectional Technologies | 178 | Expired |
| US6181597A | EEPROM array using 2-bit non-volatile memory cells with serial read operations | Electricity | 171 | Expired |
| US6081456A | Bit line control circuit for a memory array using 2-bit non-volatile memory cells | Electricity | 164 | Expired |
| US8378407B2 | Floating gate inverter type memory cell and array | Physics | 162 | Active |
| US6157570A | Program/erase endurance of EEPROM memory cells | Electricity | 139 | Expired |
| US6108240A | Implementation of EEPROM using intermediate gate voltage to avoid disturb conditions | Physics | 137 | Expired |
| US6147904A | Redundancy method and structure for 2-bit non-volatile memory cells | Electricity | 137 | Expired |
| US6256231A | EEPROM array using 2-bit non-volatile memory cells and method of implementing same | Electricity | 135 | Expired |
| US6044022A | Programmable configuration for EEPROMS including 2-bit non-volatile memory cell arrays | Physics | 135 | Expired |
| US6218695A | Area efficient column select circuitry for 2-bit non-volatile memory cells | Electricity | 127 | Expired |
| US6174758A | Semiconductor chip having fieldless array with salicide gates and methods for making same | Electricity | 112 | Expired |
| US6221687A | Color image sensor with embedded microlens array | Electricity | 100 | Expired |
| US7609093B2 | Comparator with low supply current spike and input offset cancellation | Electricity | 87 | Active |
| US9917104B1 | Hybrid MOS-PCM CMOS SOI switch | Electricity | 69 | Active |
| US6346442B1 | Methods for fabricating a semiconductor chip having CMOS devices and a fieldless array | Emerging Cross-Sectional Technologies | 65 | Expired |
| US6362498B1 | Color image sensor with embedded microlens array | Electricity | 57 | Expired |
| US7390718B2 | SONOS embedded memory with CVD dielectric | Electricity | 54 | Expired |
| US7773138B2 | Color pattern and pixel level binning for APS image sensor using 2×2 photodiode sharing scheme | Electricity | 53 | Active |
| US7358583B2 | Via wave guide with curved light concentrator for image sensing devices | Electricity | 49 | Active |
| US6469929B1 | Structure and method for high speed sensing of memory arrays | Physics | 48 | Expired |
| US6351415B1 | Symmetrical non-volatile memory array architecture without neighbor effect | Physics | 46 | Expired |
| US6878981B2 | Triple-well charge pump stage with no threshold voltage back-bias effect | Electricity | 44 | Expired |
| US6456557B1 | Voltage regulator for memory device | Physics | 41 | Expired |
| US6937523B2 | Neighbor effect cancellation in memory array architecture | Physics | 40 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.