Radiation-emitting component
US11011573B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 28, 2018 |
| Grant date | May 18, 2021 |
| Priority date | — |
| Expiry date | May 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8314
Abstract
A radiation-emitting component includes a semiconductor layer sequence including first and second semiconductor layers, and an active region and is arranged between the first and second semiconductor layers, first and second electrodes electrically connect to the first and second semiconductor layers, a semiconductor layer sequence generates electromagnetic radiation depending on a current flow between the first and second electrodes, a driver field-effect transistor includes at least one driver gate and at least one driver channel, the second electrode and the driver channel electrode separately electrically connect to the driver channel and the driver gate electrode electrically connects to the driver gate, and the driver field-effect transistor is configured to control a current flow between the driver channel electrode and the second electrode through the driver channel and thereby the current flow between the first and second electrodes, depending on a voltage applied to the driver gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.