Semiconductor device with low resistivity contact structure
US11011611B2 · kind B2 · utility
1Cited by
11References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 29, 2020 |
| Grant date | May 18, 2021 |
| Priority date | — |
| Expiry date | Jun 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/259
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate having a conductive region made of silicon, germanium or a combination thereof. The semiconductor device structure also includes an insulating layer over the semiconductor substrate and a fill metal material layer in the insulating layer. In addition, the semiconductor device structure includes a nitrogen-containing metal silicide or germanide layer between the conductive region and the fill metal material layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.