Method for making thin film transistor with nanowires as masks
US11011628B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 18, 2019 |
| Grant date | May 18, 2021 |
| Priority date | — |
| Expiry date | Apr 18, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a thin film transistor, the method includes: providing a semiconductor layer; arranging a first photoresist layer, a nanowire structure, a second photoresist layer on the semiconductor layer, wherein the nanowire structure includes a single nanowire; forming one opening in the first photoresist layer and the second photoresist layer to form an exposed surface, wherein a part of the nanowire is exposed and suspended in the opening; depositing a conductive film layer on the exposed surface using the nanowire structure as a mask, wherein the conductive film layer defines a nano-scaled channel, and the conductive film layer is divided into two regions, one region is used as a source electrode, and the other region is used as a drain electrode; forming an insulating layer on the semiconductor layer to cover the source electrode and the drain electrode, and locating a gate electrode on the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.