Power semiconductor switch with improved controllability

US11011629B2 · kind B2 · utility

Assignee

• Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

• Markus Beninger-Bina · Großhelfendorf, DE
• Matteo Dainese · Munich, DE
• Ingo Dirnstorfer · Eindhoven, NL
• Erich Griebl · Dorfen, DE
• Caspar Leendertz · Munich, DE
• Christian Philipp Sandow · Haar, DE

Key dates

• Filing date: Nov 26, 2019
• Grant date: May 18, 2021
• Expiry date: Nov 26, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/641

Abstract

A power semiconductor switch includes a cross-trench structure associated with at least one IGBT cell. The cross-trench structure merge at least one control trench, at least one dummy trench and at least one further trench of at least one IGBT cell to each other. The cross-trench structure overlaps at least partially along a vertical direction with trenches of the at least one IGBT-cell.