Inventor · Munich, DE

Caspar Leendertz

42Patents
2h-index
40Co-inventors
49Inventor score

Filing activity: Mar 23, 2018 → Dec 28, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US10586845B1 SiC trench transistor device and methods of manufacturing thereof Electricity 7 Active
US10304952B2 Power semiconductor device with dV/dt controllability and cross-trench arrangement Electricity 3 Active
US11367775B1 Shielding structure for SiC devices Electricity 2 Active
US10840362B2 IGBT with dV/dt controllability Electricity 1 Active
US10644141B2 Power semiconductor device with dV/dt controllability Electricity 1 Active
US11552170B2 Semiconductor device including current spread region Electricity 1 Active
US11011606B2 Semiconductor component having a SiC semiconductor body and method for producing a semiconductor component Electricity 1 Active
US11610976B2 Semiconductor device including a transistor with one or more barrier regions Electricity 1 Active
US11552173B2 Silicon carbide device with trench gate Emerging Cross-Sectional Technologies 1 Active
US10586851B2 Silicon carbide semiconductor device and method of manufacturing Electricity 1 Active
US10957768B1 Silicon carbide device with an implantation tail compensation region Electricity 1 Active
US11581428B2 IGBT with dV/dt controllability Electricity 1 Active
US11177354B2 Method of manufacturing silicon carbide semiconductor devices Electricity 0 Active
US10903322B2 SiC power semiconductor device with integrated body diode Electricity 0 Active
US11764063B2 Silicon carbide device with compensation region and method of manufacturing Electricity 0 Active
US11888032B2 Method of producing a silicon carbide device with a trench gate Emerging Cross-Sectional Technologies 0 Active
US11462611B2 SiC device with channel regions extending along at least one of the (1-100) plane and the (-1100) plane and methods of manufacturing thereof Electricity 0 Active
US11380756B2 Silicon carbide device with Schottky contact Electricity 0 Active
US10985248B2 SiC power semiconductor device with integrated Schottky junction Emerging Cross-Sectional Technologies 0 Active
US11101343B2 Silicon carbide field-effect transistor including shielding areas Electricity 0 Active
US11552172B2 Silicon carbide device with compensation layer and method of manufacturing Electricity 0 Active
US11322596B2 Semiconductor device including junction material in a trench and manufacturing method Electricity 0 Active
US11757031B2 Power transistor with integrated Schottky diode Electricity 0 Active
US11075290B2 Power semiconductor device having a cross-trench arrangement Electricity 0 Active
US11610986B2 Power semiconductor switch having a cross-trench structure Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.