Semiconductor laser diode

US11011887B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Sven Gerhard · Alteglofsheim, DE
• Christoph Eichler · Donaustauf, DE
• Alfred Lell · Maxhütte-Haidhof, DE
• Bernhard Stojetz · Wiesent, DE

Key dates

• Filing date: Dec 21, 2017
• Grant date: May 18, 2021
• Expiry date: Dec 21, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S2301/18
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a semiconductor layer sequence including an active layer having a main extension plane, configured to generate light in an active region during operation and configured to radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, and wherein the first and second contact regions adjoin one another.