Manufacturable multi-emitter laser diode
US11011889B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2020 |
| Grant date | May 18, 2021 |
| Priority date | — |
| Expiry date | Feb 14, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4056
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.