Methods of providing high purity SiOC and SiC materials

US11014819B2 · kind B2 · utility

Assignee

• Pallidus, Inc. · US

Inventors

• Douglas M. Dukes · Troy, US
• Ashish P. Diwanji · Zanesville, US
• Andrew R. Hopkins · Sylvania, US
• Walter J. Sherwood · Ballston Lake, US
• Glenn Sandgren · Ambler, US
• Mark S. Land · Houston, US
• Brian L. Benac · Hadley, US

Key dates

• Filing date: Sep 24, 2015
• Grant date: May 25, 2021
• Expiry date: Feb 1, 2039

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C09K8/80
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.