Sensors with a front-end-of-line solution-receiving cavity
US11016055B2 · kind B2 · utility
3Cited by
10References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 9, 2019 |
| Grant date | May 25, 2021 |
| Priority date | — |
| Expiry date | Jul 9, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/611
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Structures for transistor-based sensors and related fabrication methods. A layer stack is formed that includes a semiconductor layer and a cavity. A transistor is formed that has a gate electrode over the layer stack, and an interconnect structure is formed over the layer stack and the transistor. First and second openings are formed that extend through the metallization levels of the interconnect structure and the semiconductor layer to the cavity. The first opening defines a fluid inlet coupled to the cavity, and the second opening defines a fluid outlet coupled to the cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.