Patent · US Active

Method of ion implantation and an apparatus for the same

US11017979B2 · kind B2 · utility

0Cited by

0References

15Claims

0Family size

Assignee

Shanghai Huali Microelectronics Corporation · CN

Inventors

Yi Tang · Torrance, US
Weiyimin Dong · Shanghai, CN

Key dates

Filing date	Sep 11, 2019
Grant date	May 25, 2021
Priority date	—
Expiry date	Sep 11, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/152
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

The present disclosure relates to semiconductor devices, specifically discloses a method and an apparatus for ion implantation. The above method may comprise: generating a particle beam that satisfies the implantation energy, wherein the particle beam comprises the target ion and the impurity particle; applying a first deflection magnetic field to the particle beam to deflect the particle beam, and applying a second deflection magnetic field to the deflected particle beam to cause a second deflection of the particle beam to separate the target ion from the impurity particle; and implanting the separated target ion into the semiconductor wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.