Yi Tang
23Patents
2h-index
13Co-inventors
50Inventor score
Filing activity: Mar 8, 2013 → Sep 28, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9245985B2 | IGBT with buried emitter electrode | Electricity | 4 | Active |
| US9871128B2 | Bipolar semiconductor device with sub-cathode enhancement regions | Electricity | 3 | Active |
| US9859407B2 | IGBT having deep gate trench | Electricity | 2 | Active |
| US9299819B2 | Deep gate trench IGBT | Electricity | 2 | Active |
| US9496378B2 | IGBT with buried emitter electrode | Electricity | 1 | Active |
| US10164078B2 | Bipolar semiconductor device with multi-trench enhancement regions | Electricity | 1 | Active |
| US12396156B2 | Memory structure and manufacturing method thereof, and semiconductor structure | Electricity | 0 | Active |
| US12419033B2 | Semiconductor structure and manufacturing method thereof | Electricity | 0 | Active |
| US9799725B2 | IGBT having a deep superjunction structure | Electricity | 0 | Active |
| US9831330B2 | Bipolar semiconductor device having a deep charge-balanced structure | Electricity | 0 | Active |
| US12426328B2 | Semiconductor structure and manufacturing method thereof | Electricity | 0 | Active |
| US12402300B2 | Semiconductor device having channel regions distributed on two opposite sides of a gate electrode | Electricity | 0 | Active |
| US12389588B2 | Memory and forming method thereof | Electricity | 0 | Active |
| US9768284B2 | Bipolar semiconductor device having a charge-balanced inter-trench structure | Electricity | 0 | Active |
| US12336167B2 | Memory and forming method thereof | Electricity | 0 | Active |
| US9685506B2 | IGBT having an inter-trench superjunction structure | Electricity | 0 | Active |
| US12336168B2 | Method of manufacturing semiconductor structure and semiconductor structure | Electricity | 0 | Active |
| US12426240B2 | Semiconductor structure with a plurality of connection lines | Electricity | 0 | Active |
| US11017979B2 | Method of ion implantation and an apparatus for the same | Electricity | 0 | Active |
| US12419028B2 | Semiconductor structure and method for forming same | Electricity | 0 | Active |
| US12176213B2 | Semiconductor structure and manufacturing method using different ion implantation energy | Electricity | 0 | Active |
| US12419038B2 | Semiconductor structure, method for forming same, and layout structure | Electricity | 0 | Active |
| US10115812B2 | Semiconductor device having a superjunction structure | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.