Semiconductor device
US11018107B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 2019 |
| Grant date | May 25, 2021 |
| Priority date | — |
| Expiry date | May 20, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.