Patent · US Active

Storage apparatus

US11018189B2 · kind B2 · utility

2Cited by
0References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 15, 2018
Grant dateMay 25, 2021
Priority date
Expiry dateMar 15, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B63/845
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A storage apparatus includes a plurality of first wiring layers extending in one direction, a plurality of second wiring layers extending in another direction, and a plurality of memory cells provided in respective opposing regions in which the plurality of first wiring layers and the plurality of second wiring layers are opposed to each other. The plurality of memory cells each includes a selector element layer, a storage element layer, and an intermediate electrode layer provided between the selector element layer and the storage element layer. One or more of the selector element layer, the storage element layer, and the intermediate electrode layer is a common layer that is common between the plurality of memory cells, in which the plurality of memory cells is adjacent to each other and extends in the one direction or the other direction. The intermediate electrode layer includes a nonlinear resistive material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.