Inventor · Rifu, JP

Kazuhiro Ohba

57Patents
8h-index
37Co-inventors
74Inventor score

Filing activity: May 2, 2002 → Nov 12, 2019

Most-cited inventions

PatentTitleAreaCited byStatus
US7026671B2 Magnetoresistive effect element, magnetic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device Emerging Cross-Sectional Technologies 47 Expired
US7262064B2 Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereof Electricity 26 Expired
US7315053B2 Magnetoresistive effect element and magnetic memory device Electricity 25 Expired
US6831314B2 Magnetoresistive effect element and magnetic memory device Electricity 25 Expired
US9543512B2 Switch device and storage unit Electricity 13 Active
US6879514B2 Magnetoresistive element and magnetic memory unit Physics 10 Expired
US6815745B2 Tunnel magnetoresistive effect element, method of manufacturing tunnel magnetoresistive effect element and magnetic memory device Electricity 9 Expired
US7034348B2 Magnetoresistive effect element and magnetic memory device Electricity 9 Expired
US10084017B2 Switch device and storage unit having a switch layer between first and second electrodes Physics 8 Active
US7888755B2 Magnetic storage device with intermediate layers having different sheet resistivities Physics 7 Active
US9058873B2 Memory element having ion source layers with different contents of a chalcogen element Physics 7 Active
US6990014B2 Magnetoresistive element and magnetic memory unit Physics 6 Expired
US8427860B2 Memory component, memory device, and method of operating memory device Physics 6 Active
US6879473B2 Magnetoresistive device and magnetic memory device Electricity 5 Expired
US7696511B2 Memory element and memory device Electricity 5 Active
US6999288B2 Magnetoresistive effect element and magnetic memory device Electricity 4 Expired
US9466791B2 Storage device and storage unit Electricity 4 Active
US8492740B2 Memory element and memory device Electricity 3 Active
US6992868B2 Magnetoresistive effect element and magnetic memory device Electricity 3 Expired
US8730709B2 Memory component, memory device, and method of operating memory device Physics 3 Active
US8699260B2 Memory element and memory device Electricity 2 Active
US10403680B2 Switch device and storage unit Electricity 2 Active
US9543514B2 Memory component, memory device, and method of operating memory device Physics 2 Active
US11018189B2 Storage apparatus Electricity 2 Active
US9240549B2 Memory component, memory device, and method of operating memory device Physics 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.