Patent · US Active

Metallization in integrated circuit structures

US11018222B1 · kind B1 · utility

3Cited by

1References

20Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Daniel B. O'Brien · Beaverton, US
Christopher J. Wiegand · Portland, US
Lukas Baumgartel · Portland, US
Oleg Golonzka · Beaverton, US
Dan S. LAVRIC · Beaverton, US
Daniel Bergstrom · Sarver, US
Jeffrey S. Leib · Beaverton, US
Timothy Duffy · Beaverton, US
Dax M. Crum · Beaverton, US

Key dates

Filing date	Dec 27, 2019
Grant date	May 25, 2021
Priority date	—
Expiry date	Dec 27, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/667
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

Disclosed herein are structures, methods, and assemblies related to metallization in integrated circuit (IC) structures. For example, in some embodiments, an IC structure may include a first nanowire in a metal region and a second nanowire in the metal region. A distance between the first nanowire and the second nanowire may be less than 5 nanometers, and the metal region may include tungsten between the first nanowire and the second nanowire.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.