Inventor · Beaverton, OR, US

Jeffrey S. Leib

26Patents
3h-index
22Co-inventors
59Inventor score

Filing activity: Dec 19, 2013 → Feb 7, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US10121875B1 Replacement gate structures for advanced integrated circuit structure fabrication Electricity 49 Active
US10741669B2 Differentiated voltage threshold metal gate structures for advanced integrated circuit structure fabrication Electricity 9 Active
US9704744B2 Method of forming a wrap-around contact on a semiconductor device Electricity 5 Active
US10790378B2 Replacement gate structures for advanced integrated circuit structure fabrication Electricity 3 Active
US11018222B1 Metallization in integrated circuit structures Electricity 3 Active
US10886383B2 Replacement gate structures for advanced integrated circuit structure fabrication Electricity 3 Active
US10796968B2 Dual metal silicide structures for advanced integrated circuit structure fabrication Electricity 3 Active
US10727313B2 Dual metal gate structures for advanced integrated circuit structure fabrication Electricity 3 Active
US10840151B2 Dual metal silicide structures for advanced integrated circuit structure fabrication Electricity 3 Active
US11088261B2 Trench contact structures for advanced integrated circuit structure fabrication Electricity 2 Active
US11508626B2 Dual metal silicide structures for advanced integrated circuit structure fabrication Electricity 2 Active
US10957782B2 Trench contact structures for advanced integrated circuit structure fabrication Electricity 1 Active
US9711399B2 Direct plasma densification process and semiconductor devices Electricity 1 Active
US11664439B2 Trench contact structures for advanced integrated circuit structure fabrication Electricity 1 Active
US10854732B2 Dual metal gate structures for advanced integrated circuit structure fabrication Electricity 1 Active
US11063151B2 Metal chemical vapor deposition approaches for fabricating wrap-around contacts and resulting structures Electricity 0 Active
US11961767B2 Dual metal silicide structures for advanced integrated circuit structure fabrication Electricity 0 Active
US11955532B2 Dual metal gate structure having portions of metal gate layers in contact with a gate dielectric Electricity 0 Active
US11482611B2 Replacement gate structures for advanced integrated circuit structure fabrication Electricity 0 Active
US11948997B2 Trench contact structures for advanced integrated circuit structure fabrication Electricity 0 Active
US12255247B2 Trench contact structures for advanced integrated circuit structure fabrication Electricity 0 Active
US11342445B2 Differentiated voltage threshold metal gate structures for advanced integrated circuit structure fabrication Electricity 0 Active
US12051698B2 Fabrication of gate-all-around integrated circuit structures having molybdenum nitride metal gates and gate dielectrics with a dipole layer Electricity 0 Active
US10297499B2 Method of forming a wrap-around contact on a semiconductor device Electricity 0 Active
US12225740B2 Dual metal silicide structures for advanced integrated circuit structure fabrication Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.