Semiconductor layer sequence and method for producing a semiconductor layer sequence

US11018277B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Werner Bergbauer · Windberg, DE
• Lise Lahourcade · Regensburg, DE
• Jürgen Off · Regensburg, DE

Key dates

• Filing date: Oct 24, 2017
• Grant date: May 25, 2021
• Expiry date: Oct 24, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

A semiconductor layer sequence and a method for producing a semiconductor layer sequence are disclosed. In an embodiment a semiconductor layer sequence includes a first nitridic compound semiconductor layer, an intermediate layer, a second nitridic compound semiconductor layer and an active layer, wherein the intermediate layer comprises an AlGaN layer with an Al content of at least 5%, wherein the second nitridic compound semiconductor layer has a lower proportion of Al than the AlGaN layer such that relaxed lattice constants of the AlGaN layer of the intermediate layer and of the second nitridic compound semiconductor layer differ, wherein the second nitridic compound semiconductor layer and the active layer are grown on the intermediate layer in a lattice-matched manner, wherein the active layer comprises one or more layers of AlInGaN, and wherein an In content in each of the layers of AlInGaN is at most 12%.