Optoelectronic semiconductor body and light emitting diode

US11018281B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Werner Bergbauer · Windberg, DE
• Joachim Hertkorn · Neukirchen, DE
• Alexander Walter · Hemau, DE

Key dates

• Filing date: Jun 26, 2017
• Grant date: May 25, 2021
• Expiry date: Oct 7, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

An optoelectronic semiconductor body includes an active region including a quantum well that generates electromagnetic radiation, a first region that impedes passage of charge carriers from the active region, and a second region that impedes passage of charge carriers from the active region, wherein the semiconductor body is based on a nitride compound semiconductor material, the first region is directly adjacent to the active region on a p-side, the second region is arranged on a side of the first region facing away from the active region, the first region has an electronic band gap larger than the electronic band gap of the quantum well and less than or equal to an electronic band gap of the second region, and the first region and the second region contain aluminum.