Semiconductor devices using insulator-metal phase change materials and method for fabrication
US11018296B1 · kind B1 · utility
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Key dates
| Filing date | Sep 4, 2020 |
| Grant date | May 25, 2021 |
| Priority date | — |
| Expiry date | Sep 4, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An exemplary semiconductor incorporates phase change material MoxW1-xTe2 that may be the semiconducting channel or may be part of a control terminal/gate of the semiconductor. The phase change material selectably being in one of metal and insulator phases depending on whether a voltage field greater than a predetermined phase change field is present at the phase change material. The properties of the semiconductor are varied depending on the phase of the phase change material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.