Benjamin Heying
5Patents
2h-index
5Co-inventors
40Inventor score
Filing activity: Dec 7, 2007 → Sep 4, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7632726B2 | Method for fabricating a nitride FET including passivation layers | Electricity | 6 | Active |
| US8431962B2 | Composite passivation process for nitride FET | Electricity | 3 | Active |
| US8710511B2 | AIN buffer N-polar GaN HEMT profile | Electricity | 1 | Active |
| US10811601B2 | Semiconductor devices using insulator-metal phase change materials and method for fabrication | Electricity | 1 | Active |
| US11018296B1 | Semiconductor devices using insulator-metal phase change materials and method for fabrication | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.