Substrate processing apparatus and precursor gas nozzle
US11020760B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2017 |
| Grant date | Jun 1, 2021 |
| Priority date | — |
| Expiry date | Dec 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67248
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate processing apparatus includes: a process chamber accommodating substrates; a heating system for heating the process chamber to a predetermined temperature; a precursor gas supply system including a precursor gas nozzle and for supplying a precursor gas from the precursor gas nozzle to the process chamber; a reaction gas supply system configured to supply a reaction gas reacting with the precursor gas in the process chamber; and a control part configured to control the heating system, the precursor gas supply system and the reaction gas supply system to form a film on each of the plurality of substrates by performing a process, while heating the process chamber accommodating the plurality of substrates to the predetermined temperature. The process includes supplying the precursor gas from the precursor gas nozzle to the process chamber and supplying the reaction gas to the process chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.