Overlay-shift measurement system and method for manufacturing semiconductor structure and measuring alignment mark of semiconductor structure
US11022889B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2018 |
| Grant date | Jun 1, 2021 |
| Priority date | — |
| Expiry date | Aug 9, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/54426
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Methods for manufacturing a semiconductor structure are provided. A substrate is provided. A first lithography is performed according to a first layer mask, to form a plurality of first photonic crystals with a first pitch on a first area of a layer above the substrate. A second lithography is performed according to a second layer mask, to form a plurality of second photonic crystals with a second pitch on a second area of the layer. A light is provided to illuminate the first and second photonic crystals. Light reflected by the first and second photonic crystals or transmitted through the first and second photonic crystals is received. The received light is analyzed to detect overlay-shift between the first photonic crystals corresponding to the first layer mask and the second photonic crystals corresponding to the second layer mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.