Photoresist bridging defect removal by reverse tone weak developer
US11022891B2 · kind B2 · utility
0Cited by
11References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2017 |
| Grant date | Jun 1, 2021 |
| Priority date | — |
| Expiry date | Nov 1, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for removing photoresist bridging defects includes coating a photoresist layer over a dielectric layer formed over a substrate, applying a first developer that results in formation of one or more photoresist bridging defects, and applying a second developer to remove the one or more photoresist bridging defects. The first developer is an aqueous base developer and the second developer is a reverse tone weak developer (RTWD), the RTWD being a mixture of a first (good) solvent and a second (bad) solvent for the photoresist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.