Method of programming memory device and related memory device
US11024371B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2019 |
| Grant date | Jun 1, 2021 |
| Priority date | — |
| Expiry date | Nov 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
When programming a memory device which includes a plurality of memory cells coupled to a plurality of word lines and a plurality of bit lines, coarse programming is perform on two adjacent first and second word lines among the plurality of word lines. Next, an unselected bit line among the plurality of bit lines is pre-charged during a first period after performing the coarse programming on the first word line and the second word line. Also, the channel between the unselected bit line and the second word line is turned on at the start of the first period and turned off prior to the end of the first period. Then, fine programming is performed on the first word line during a second period subsequent to the first period.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.