Two-dimensional materials integrated with multiferroic layers

US11024447B2 · kind B2 · utility

Assignee

• The Government of the United States of America, as represented by the Secretary of the Navy · US

Inventor

• Berend T. Jonker · Waldorf, US

Key dates

• Filing date: Nov 21, 2017
• Grant date: Jun 1, 2021
• Expiry date: May 4, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D12/211
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields can influence properties of the two-dimensional material, including carrier density, transport properties, optical properties, surface chemistry, piezoelectric-induced strain, magnetic properties, and interlayer spacing. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided, including tunable sensors, optical emitters, and programmable logic gates.