Selective etch formulation for silicon oxide
US11024512B1 · kind B1 · utility
0Cited by
9References
16Claims
0Family size
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Key dates
| Filing date | Mar 6, 2020 |
| Grant date | Jun 1, 2021 |
| Priority date | — |
| Expiry date | Mar 6, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30604
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Enhanced compositions and methods are provided for selectively etching silicon wafers, which is particularly useful in the context of silicon wafer manufacturing and processing applications. Optionally, a formulation is provided which selectively etches silicon dioxide in preference to aluminum oxide. Optionally, a formulation and method are provided that is substantially non-aqueous.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.