David L. Rath
76Patents
14h-index
125Co-inventors
87Inventor score
Filing activity: Feb 9, 1990 → Oct 15, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5800626A | Control of gas content in process liquids for improved megasonic cleaning of semiconductor wafers and microelectronics substrates | Performing Operations; Transporting | 80 | Expired |
| US9324650B2 | Interconnect structures with fully aligned vias | Electricity | 76 | Active |
| US6975032B2 | Copper recess process with application to selective capping and electroless plating | Electricity | 51 | Expired |
| US7446036B1 | Gap free anchored conductor and dielectric structure and method for fabrication thereof | Electricity | 37 | Active |
| US6033996A | Process for removing etching residues, etching mask and silicon nitride and/or silicon dioxide | Emerging Cross-Sectional Technologies | 26 | Expired |
| US5780363A | Etching composition and use thereof | Emerging Cross-Sectional Technologies | 26 | Expired |
| US7517736B2 | Structure and method of chemically formed anchored metallic vias | Electricity | 25 | Active |
| US6200891A | Removal of dielectric oxides | Electricity | 24 | Expired |
| US9685406B1 | Selective and non-selective barrier layer wet removal | Electricity | 23 | Active |
| US6584989B2 | Apparatus and method for wet cleaning | Emerging Cross-Sectional Technologies | 22 | Expired |
| US5962384A | Method for cleaning semiconductor devices | Chemistry; Metallurgy | 18 | Expired |
| US5576099A | Inductive head lamination with layer of magnetic quenching material | Emerging Cross-Sectional Technologies | 18 | Expired |
| US7056648B2 | Method for isotropic etching of copper | Electricity | 18 | Expired |
| US6167891A | Temperature controlled degassification of deionized water for megasonic cleaning of semiconductor wafers | Performing Operations; Transporting | 16 | Expired |
| US7064064B2 | Copper recess process with application to selective capping and electroless plating | Electricity | 13 | Expired |
| US6066267A | Etching of silicon nitride | Electricity | 13 | Expired |
| US6150282A | Selective removal of etching residues | Emerging Cross-Sectional Technologies | 13 | Expired |
| US5965465A | Etching of silicon nitride | Electricity | 12 | Expired |
| US6254796A | Selective etching of silicate | Chemistry; Metallurgy | 10 | Expired |
| US7993816B2 | Method for fabricating self-aligned nanostructure using self-assembly block copolymers, and structures fabricated therefrom | Physics | 9 | Active |
| US9806023B1 | Selective and non-selective barrier layer wet removal | Electricity | 8 | Active |
| US7537709B2 | Method for isotropic etching of copper | Electricity | 8 | Expired |
| US8492239B2 | Homogeneous porous low dielectric constant materials | Electricity | 8 | Active |
| US6295998A | Temperature controlled gassification of deionized water for megasonic cleaning of semiconductor wafers | Performing Operations; Transporting | 8 | Expired |
| US8617689B2 | Bonding of substrates including metal-dielectric patterns with metal raised above dielectric and structures so formed | Emerging Cross-Sectional Technologies | 8 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.