Patent · US Active

Semiconductor device package and method of manufacturing the same

US11024586B2 · kind B2 · utility

0Cited by
0References
20Claims
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Assignee

Inventors

Key dates

Filing dateJan 22, 2019
Grant dateJun 1, 2021
Priority date—
Expiry dateJan 22, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3511
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device package includes a semiconductor die, a first conductive element, a second conductive element, a metal layer, and a first redistribution layer (RDL). The semiconductor die includes a first surface and a second surface opposite to the first surface. The first conductive element is disposed on the second surface of the semiconductor die. The second conductive element is disposed next to the semiconductor die. The metal layer is disposed on the second conductive element and electrically connected to the second conductive element. The first RDL is disposed on the metal layer and electrically connected to the metal layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.