Semiconductor device and method for manufacturing the same

US11024708B1 · kind B1 · utility

Assignee

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Yongliang Li · Beijing, CN
• Xiaohong Cheng · Beijing, CN
• Qingzhu ZHANG · Beijing, CN
• Huaxiang Yin · Beijing, CN
• Wenwu Wang · Beijing, CN

Key dates

• Filing date: Mar 20, 2020
• Grant date: Jun 1, 2021
• Expiry date: Mar 20, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/834

Abstract

A semiconductor device, including: a silicon substrate; multiple fin structures, formed on the silicon substrate, where each extends along a first direction; a shallow trench insulator, located among the multiple fin structures; a gate stack, intersecting with the multiple fin structures and extending along a second direction, where first spacers are formed on two sidewalls in the first direction of the gate stack; source-or-drain regions, formed on the multiple fin structures, and located at two sides of the gate stack along the first direction; and a channel region, including a portion of the multiple fin structures located between the first spacers. and notch structures. A notch structure recessed inward is located between each of the multiple fin structures and the silicon substrate. The notch structure includes an isolator that isolates each of the multiple fin structures from the silicon substrate.