Semiconductor devices and methods for forming semiconductor devices

US11024712B2 · kind B2 · utility

Assignee

• Intel IP Corporation · US

Inventors

• Vase Jovanov · Munich, DE
• Peter Baumgartner · Munich, DE
• Gregor Bracher · Munich, DE
• Luis-Felipe Giles · Munich, DE
• Uwe Hodel · Munich, DE
• Andreas Lachmann · Unterhaching, DE
• Philipp Riess · Munich, DE
• Karl-Henrik Rydén · Germering, DE

Key dates

• Filing date: Jun 27, 2018
• Grant date: Jun 1, 2021
• Expiry date: Jun 27, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/126

Abstract

A semiconductor device is proposed. The semiconductor device includes a source region of a field effect transistor having a first conductivity type, a body region of the field effect transistor having a second conductivity type, and a drain region of the field effect transistor having the first conductivity type. The source region, the drain region, and the body region are located in a semiconductor substrate of the semiconductor device and the body region is located between the source region and the drain region. The drain region extends from the body region through a buried portion of the drain region to a drain contact portion of the drain region located at a surface of the semiconductor substrate, the buried portion of the drain region is located beneath a spacer doping region, and the spacer doping region is located within the semiconductor substrate.