Uwe Hodel
15Patents
2h-index
27Co-inventors
50Inventor score
Filing activity: Oct 31, 2005 → Jun 23, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9059282B2 | Semiconductor devices having transistors along different orientations | Electricity | 4 | Active |
| US9704756B2 | Methods of manufacturing semiconductor devices | Electricity | 2 | Active |
| US7973365B2 | Integrated RF ESD protection for high frequency circuits | Electricity | 2 | Active |
| US11380806B2 | Variable capacitance device with multiple two-dimensional electron gas (2DEG) layers | Electricity | 1 | Active |
| US8133765B2 | Integrated RF ESD protection for high frequency circuits | Electricity | 1 | Active |
| US11373995B2 | Group III-nitride antenna diode | Electricity | 1 | Active |
| US8994449B2 | Electronic circuit and electronic circuit arrangement | Electricity | 1 | Active |
| US7388734B2 | Integrated circiut arrangement | Electricity | 1 | Expired |
| US8587055B2 | Integrated circuit using a superjunction semiconductor device | Electricity | 0 | Active |
| US9583595B2 | Methods of forming low noise semiconductor devices | Electricity | 0 | Active |
| US11545586B2 | Group III-nitride Schottky diode | Electricity | 0 | Active |
| US11424354B2 | Group III-nitride silicon controlled rectifier | Electricity | 0 | Active |
| US11024712B2 | Semiconductor devices and methods for forming semiconductor devices | Electricity | 0 | Active |
| US12034085B2 | Variable capacitance device with multiple two-dimensional electron gas (2DEG) layers | Electricity | 0 | Active |
| US9171726B2 | Low noise semiconductor devices | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.