Patent · US Active

Diffused field-effect transistor and method of fabricating same

US11024722B1 · kind B1 · utility

1Cited by

1References

4Claims

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Assignee

NEXCHIP SEMICONDUCTOR CORPORATION · CN

Inventors

Menghui Wang · Shanghai, CN
Ching-Ming Lee · Daguantang, CN
Jinzhuan Zhu · Daguantang, CN

Key dates

Filing date	Mar 25, 2020
Grant date	Jun 1, 2021
Priority date	—
Expiry date	Mar 25, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/516

Abstract

A diffused field-effect transistor (FET) and a method of fabricating same are disclosed. The diffused FET is dually optimized in voltage resistance by incorporating both a trench isolation structure and a thick second oxide layer and thus has a more significantly improved breakdown voltage. With the thick second oxide layer ensuring suitable voltage resistance of the transistor device, its on-resistance can be reduced either by reducing the size of the trench isolation structure or increasing an ion dopant concentration of a drift region. As such, a good tradeoff between voltage resistance and on-resistance is achievable.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.