Semiconductor device including metal oxide film
US11024725B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2016 |
| Grant date | Jun 1, 2021 |
| Priority date | — |
| Expiry date | Sep 8, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
Abstract
In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.