Removal of moisture from hydrazine
US11027974B2 · kind B2 · utility
0Cited by
7References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2017 |
| Grant date | Jun 8, 2021 |
| Priority date | — |
| Expiry date | Feb 2, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/82
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
The present invention generally relates to the field of gas and liquid phase desiccation. In particular, the present invention relates to methods for removing moisture (and hence oxygen precursors) from hydrazine, thereby providing a high purity source gas suitable for use in vapor deposition processes, such as but not limited to, chemical vapor deposition (CVD) or an atomic layer deposition (ALD).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.