Photoresist composition and method of forming photoresist pattern
US11029602B2 · kind B2 · utility
2Cited by
10References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 31, 2018 |
| Grant date | Jun 8, 2021 |
| Priority date | — |
| Expiry date | Dec 6, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/38
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of forming a photoresist pattern includes forming a protective layer over a photoresist layer formed on a substrate, and selectively exposing the photoresist layer to actinic radiation. The photoresist layer is developed to form a pattern in the photoresist layer, and the protective layer is removed. The protective layer includes a polymer having fluorocarbon pendant groups.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.