Memory device with recycling arrangement for gleaned charge
US11031051B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2019 |
| Grant date | Jun 8, 2021 |
| Priority date | — |
| Expiry date | Nov 27, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/06
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a sense amplifier; a branched line selectively connectable to the sense amplifier; a recycling arrangement selectively connectable to the branched line; an array of memory cells; an array of bit lines connected to corresponding memory cells in the array of memory cells; a multiplexer configured to selectively connect the branched line to a selected one in the array of memory cells through a corresponding line amongst the array of bit lines; and a controller configured to control the recycling arrangement and the multiplexer to perform intra-sense-amplifier recycling of a gleaned amount of charge (gleaned charge) recovered from a first read operation to a second read operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.