Etching using an electrolyzed chloride solution

US11031253B2 · kind B2 · utility

Assignee

• IMEC VZW · BE

Inventors

• Quoc Toan Le · Belgrade, BE
• Henricus Philipsen · Leuven, BE
• Frank Holsteyns · Steenokkerzeel, BE

Key dates

• Filing date: Sep 18, 2019
• Grant date: Jun 8, 2021
• Expiry date: Feb 13, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31111
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method for etching one or more entities on a semiconductor structure, each entity being made of a material selected from metals and metal nitrides is provided. The method includes the steps of: (a) oxidizing by electrolysis, at a current of at least 0.1 A, a precursor solution comprising chloride anions at a concentration ranging from 0.01 mol/l to 1.0 mol/l, thereby forming an etching solution; (b) providing a semiconductor structure having the one or more entities thereon; and (c) etching at least partially the one or more entities by contacting them with the etching solution.