Conductive feature formation and structure
US11031286B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2018 |
| Grant date | Jun 8, 2021 |
| Priority date | — |
| Expiry date | Jul 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.