Memory device containing ovonic threshold switch material thermal isolation and method of making the same
US11031435B2 · kind B2 · utility
3Cited by
15References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2019 |
| Grant date | Jun 8, 2021 |
| Priority date | — |
| Expiry date | Jun 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device includes a plurality of memory cells, and an isolation material portion located between the memory cells. The isolation material portion includes at least one ovonic threshold switch material portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.