Inventor · Livermore, CA, US

Derek Stewart

23Patents
4h-index
21Co-inventors
63Inventor score

Filing activity: Oct 22, 1993 → Mar 24, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US10700093B1 Ferroelectric memory devices employing conductivity modulation of a thin semiconductor material or a two-dimensional charge carrier gas and methods of operating the same Electricity 34 Active
US10788547B2 Voltage-controlled interlayer exchange coupling magnetoresistive memory device and method of operating thereof Physics 22 Active
US9564581B1 Magnetoresistive effect devices having enhanced magnetic anisotropy Electricity 6 Active
US10290804B2 Nanoparticle-based resistive memory device and methods for manufacturing the same Electricity 5 Active
US11217289B1 Spinel containing magnetic tunnel junction and method of making the same Electricity 4 Active
US11417379B2 Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same Electricity 4 Active
US10388646B1 Electrostatic discharge protection devices including a field-induced switching element Electricity 4 Active
US5462853A Detection of components of RNA viral glycoproteins using a mannose-specific lectin binding assay Emerging Cross-Sectional Technologies 4 Expired
US10553647B2 Methods and apparatus for three-dimensional non-volatile memory Electricity 3 Active
US10355049B1 Methods and apparatus for three-dimensional non-volatile memory Electricity 3 Active
US11031435B2 Memory device containing ovonic threshold switch material thermal isolation and method of making the same Electricity 3 Active
US11349066B2 Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same Electricity 2 Active
US11176981B1 Spinel containing magnetic tunnel junction and method of making the same Physics 2 Active
US11871679B2 Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same Electricity 2 Active
US11411170B2 Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same Electricity 2 Active
US11889702B2 Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same Electricity 2 Active
US11271009B2 Ferroelectric memory devices employing conductivity modulation of a thin semiconductor material or a two-dimensional charge carrier gas and methods of operating the same Electricity 2 Active
US11839162B2 Magnetoresistive memory device including a plurality of reference layers Electricity 1 Active
US12106790B2 Magnetoresistive memory device and method of operating same using ferroelectric-controlled exchange coupling Electricity 0 Active
US12211535B2 Magnetoresistive memory device and method of operating same using ferroelectric-controlled exchange coupling Electricity 0 Active
US11887640B2 Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same Electricity 0 Active
US11443790B2 Spinel containing magnetic tunnel junction and method of making the same Electricity 0 Active
US11271040B1 Memory device containing selector with current focusing layer and methods of making the same Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.