Metal-insulator-metal (MIM) capacitor structure and method for forming the same
US11031458B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 4, 2019 |
| Grant date | Jun 8, 2021 |
| Priority date | — |
| Expiry date | Oct 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/696
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A metal-insulator-metal (MIM) capacitor structure and a method for forming the same are provided. The MIM capacitor structure includes a substrate, and the substrate includes a capacitor region and a non-capacitor region. The MIM capacitor structure includes a first electrode layer formed over the substrate, and a first spacer formed on a sidewall of the first electrode layer. The MIM capacitor structure includes a first dielectric layer formed on the first spacers, and a second electrode layer formed on the first dielectric layer. The second electrode layer extends from the capacitor region to the non-capacitor region, and the second electrode layer extends beyond an outer sidewall of the first spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.