Method of forming oxygen inserted Si-layers in power semiconductor devices

US11031466B2 · kind B2 · utility

Assignees

• Infineon Technologies Austria AG · AT
• Infineon Technologies Americas Corp. · US

Inventors

• Martin Poelzl · Ossiach, AT
• Robert Haase · Rancho Palos Verdes, US
• Maximilian Roesch · Villach, AT
• Sylvain Leomant · Pörtschach am Wörther See, AT
• Andreas Meiser · Unterhaching, DE
• Bernhard Goller · Villach, AT
• Ravi Keshav Joshi · Klagenfurt, AT

Key dates

• Filing date: Jun 9, 2020
• Grant date: Jun 8, 2021
• Expiry date: Jun 9, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of manufacturing a semiconductor device includes: forming one or more device epitaxial layers over a main surface of a doped Si base substrate; forming a diffusion barrier structure including alternating layers of Si and oxygen-doped Si in an upper part of the doped Si base substrate adjacent the main surface of the doped Si base substrate, in a lower part of the one or more device epitaxial layers adjacent the main surface of the doped Si base substrate, or in one or more additional epitaxial layers disposed between the main surface of the doped Si base substrate and the one or more device epitaxial layers; and forming a gate above the diffusion barrier structure.