Silicided gate structures
US11031484B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jun 28, 2019 |
| Grant date | Jun 8, 2021 |
| Priority date | — |
| Expiry date | Jul 31, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to differential silicide structures and methods of manufacture. The structure includes: a substrate; a gate structure comprising a silicided gate region; and source and drain regions adjacent to the gate structure and comprising S/D silicided regions having a differential thickness compared to the silicided gate region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.