Method of integration of a magnetoresistive structure
US11031546B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2018 |
| Grant date | Jun 8, 2021 |
| Priority date | — |
| Expiry date | Nov 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing one or more interconnects to magnetoresistive structure comprising (i) depositing a first conductive material in a via; (2) etching the first conductive material wherein, after etching the first conductive material a portion of the first conductive material remains in the via, (3) partially filling the via by depositing a second conductive material in the via and directly on the first conductive material in the via; (4) depositing a first electrode material in the via and directly on the second conductive material in the via; (5) polishing a first surface of the first electrode material wherein, after polishing, the first electrode material is (i) on the second conductive material in the via and (ii) over the portion of the first conductive material remaining in the via; and (6) forming a magnetoresistive structure over the first electrode material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.