Barrier ruthenium chemical mechanical polishing slurry

US11034859B2 · kind B2 · utility

Assignee

• Fujifilm Electronic Materials U.S.A., Inc. · US

Inventors

• David (Tawei) Lin · Chandler, US
• Bin Hu · Mesa, US
• Liqing Wen · Mesa, US
• Yannan Liang · Gilbert, US
• Ting-Kai Huang · 溪州鄉, TW

Key dates

• Filing date: Mar 11, 2019
• Grant date: Jun 15, 2021
• Expiry date: Mar 11, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/3212
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.