Inspection-guided critical site selection for critical dimension measurement
US11035666B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Feb 25, 2018 |
| Grant date | Jun 15, 2021 |
| Priority date | — |
| Expiry date | Dec 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Systems and methods for determining location of critical dimension (CD) measurement or inspection are disclosed. Real-time selection of locations to take critical dimension measurements based on potential impact of critical dimension variations at the locations can be performed. The design of a semiconductor device also can be used to predict locations that may be impacted by critical dimension variations. Based on an ordered location list, which can include ranking or criticality, critical dimension can be measured at selected locations. Results can be used to refine a critical dimension location prediction model.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.