Large area self imaging lithography based on broadband light source
US11036145B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2018 |
| Grant date | Jun 15, 2021 |
| Priority date | — |
| Expiry date | Jan 5, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70191
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Embodiments described herein provide a method of large area lithography to decrease widths of portions written into photoresists. One embodiment of the method includes projecting an initial light beam of a plurality of light beams at a minimum wavelength to a mask in a propagation direction of the plurality of light beams. The mask has a plurality of dispersive elements. A wavelength of each light beam of the plurality of light beams is increased until a final light beam of the plurality of light beams is projected at a maximum wavelength. The plurality of dispersive elements of the mask diffract the plurality of light beams into order mode beams to produce an intensity pattern in a medium between the mask and a substrate having a photoresist layer disposed thereon. The intensity pattern having a plurality of intensity peaks writes a plurality of portions in the photoresist layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.