Field effect transistor using transition metal dichalcogenide and a method for forming the same
US11037783B2 · kind B2 · utility
3Cited by
0References
20Claims
0Family size
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Key dates
| Filing date | May 17, 2019 |
| Grant date | Jun 15, 2021 |
| Priority date | — |
| Expiry date | May 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of forming a two-dimensional material layer, a nucleation pattern is formed over a substrate, and a transition metal dichalcogenide (TMD) layer is formed such that the TMD layer laterally grows from the nucleation pattern. In one or more of the foregoing and following embodiments, the TMD layer is single crystalline.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.